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| 2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3856 200 180 6 15 4 130(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Audio and General Purpose (Ta=25C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 100max 100max 180min External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 2SC3856 Unit A A 19.90.3 4.0 V V pF 50min 2.0max 20typ 300typ MHz a b o3.20.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 1 IB2 (A) -1 ton (s) 0.5typ tstg (s) 1.8typ tf (s) 0.6typ 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 1A 0m A VCE( sat ) - IB Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t)( V ) 3 I C - VBE Temperature Characteristics (Typical) 15 (V CE= 4V) 15 70 5 m 00 A 300m A Collector Current I C (A) Collector Current I C( A) 20 0m A 10 100 mA 2 10 mp) e Te Cas C ( 25C IB=20mA IC=10A 5A 0 0 0.5 1.0 Base Current I B( A) 1.5 2.0 0 0 0 0 1 2 3 4 -30C 125 (Case 5 50mA 1 5 (Cas e Te 1 Base-Emittor Voltage V B E( V) Temp) mp) 2 Collector-Emitter Voltage V C E( V) (V C E= 4V) 200 125C DC Curr ent Gain h FE j - a( C /W) hFE - IC Characteristics (Typical) (VCE=4V) www..com 300 D C Cur r ent Gai n h F E hFE - I C Temperature Characteristics (Typical) j-a - t Characteristics 3 100 25C Transient Thermal Resistance 1 0.5 100 Typ 50 50 -30C 20 0.02 0.1 0.5 1 5 10 15 20 0.02 0.1 0.5 1 5 10 15 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C( A) Collector Current I C( A) fT - IE Characteristics (Typical) (VCE=12V) 30 40 Safe Operating Area (Single Pulse) 10 3m P c - T a Derating 130 0m Cu t-of f Fr equen cy f T( MH Z) 10 20 Collect or Cur ren t I C( A) D C s Ma xim um Powe r Dissipat io n P C (W) Typ 10 m s s 100 W ith In 5 fin ite he at si nk 1 0.5 50 10 Without Heatsink Natural Cooling Without Heatsink 0 -0.02 -0.1 -1 Emitter Current I E( A) -10 0.1 3 10 100 200 3.5 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 78 |
Price & Availability of C3856
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